Process Equipment
SiC CVD : SiC 재질 Bulk 재료를 제조하는 장비
Key Feature
- Production : 312 Rings per Run
- Process Temp : 1500 ℃
- Process Gas : He, N2, H
- Chamber Size : 1800*2500
- Application
- 1) High Temperature Semiconductor
- 2) Wafer Holder, Carrier
- 3) Susceptor
- 4) Diffuser